1SS349

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

The 1SS349 is designed as one kind of TOSHIBA diode silicon epitaxial planar type device that can be used in low voltage high speed switching application. Features of 1SS349 are:(1)small package: SC-59;(2)low forward voltage: VF(3) = 0.49 V (typ.) @ IR = 50 uA.

The absolute maximum ratings of the 1SS349 can be summarized as:(1)maximum (peak) reverse voltage: 25 V;(2)reverse voltage: 20 V;(3)maximum (peak) forward current: 3000 mA;(4)average forward current: 1000 mA;(5)power dissipation: 200 mW;(6)junction temperature: 125 ;(7)storage temperature: -55 to +125 ;(8)operating temperature range: -40 to +100 .

The electrical characteristics of 1SS349 can be summarized as:(1)forward voltage: 0.34 to 0.55 V;(2)reverse current: 50 uA;(3)total capacitance: 250 pF. If you want to know more information such as the electrical characteristics about the 1SS349, please download the datasheet in www.seekic.com or www.chinaicmart.com.