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1SS360

Features: 􀁺· Small package􀁺· Low forward voltage : VF = 0.92V (typ.)􀁺· Fast reverse recovery time : trr = 1.6ns (typ.)􀁺· Small total capacitance : CT = 2.2pF (typ.)Specifications Parameter Symbol Ratings Unit Junction Temperature Tj 125 Storage...

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SeekIC No. : 004214624 Detail

1SS360: Features: 􀁺· Small package􀁺· Low forward voltage : VF = 0.92V (typ.)􀁺· Fast reverse recovery time : trr = 1.6ns (typ.)􀁺· Small total capacitance : CT = 2.2pF (typ...

1SS360 Data Sheet

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Part Number:
1SS360
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

􀁺· Small package
􀁺· Low forward voltage : VF = 0.92V (typ.)
􀁺· Fast reverse recovery time : trr = 1.6ns (typ.)
􀁺· Small total capacitance : CT = 2.2pF (typ.)


Specifications

Parameter Symbol Ratings Unit
Junction Temperature Tj 125
Storage Temperature Tstg −55∼125
Maximum (peak) reverse voltage VRM 85 V
DC Reverse Voltage VR 80 V
Mean Rectifying Current IO 100* mA
Maximum (peak) forward current IFM 300* mA
Surge current (10ms) IFSM 2* A
Power dissipation P 100 mW

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* Unit rating. Total rating = unit rating * 1.5




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