1SS412

Features:

·  Low forward voltage : V_F = 1.0 V (typ.)
·  Low reverse current : I_R = 0.1 nA (typ.)
·  Small total capacitance : C_T = 3.0 pF (typ.)
·  Small package : SC-70



Pinout




Specifications

Parameter	Symbol	Rating	Unit
Maximum (peak) reverse voltage	VRM	85	V
Reverse voltage	VR	80	V
Maximum (peak) forward current	IFM	300*	mA
Average forward current	IO	100*	mA
Surge current (10 ms)	IFSM	1*	A
Power dissipation	P	100	mW
Junction temperature	Tj	150
Storage temperature range	Tstg	−55∼150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and
          the significant change in temperature, etc.) may cause this product to decrease in the reliability
          significantly  even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within 
          the absolute maximum ratings. Please design the appropriate reliability upon reviewing the
          Toshiba  Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods"
           )  and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating * 0.7