20L15TPBF

Series: -
Manufacturer: Vishay Semiconductors
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Mounting Type: Through Hole
Reverse Recovery Time (trr): -
Capacitance @ Vr, F: -
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Packaging: Tube
Package / Case: TO-220-2 Fused Center, TO-220AC
Current - Reverse Leakage @ Vr: 10mA @ 15V
Voltage - Forward (Vf) (Max) @ If: 410mV @ 19A


Specifications

Parameters	Values	Units	Conditions
IF(AV) Max. Average Forward Current * See Fig. 5	20	A	50% duty cycle @ TC = 85, rectangular wave form
IFSM Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 7	700	A	5s Sine or 3s Rect. pulse	Following any rated load condition and with rated VRRMapplied
	330		10ms Sine or 6ms Rect. pulse
EAS Non-Repetitive Avalanche Energy	10	mJ	TJ = 25 , IAS = 2 Amps, L = 6 mH
IAR Repetitive Avalanche Current	0	A	Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical

Description

20L15TPbF Schottky Rectifier, 20 A

The Schottky rectifier module has been optimized for ultra low forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems.
`125T<sub>J</sub> operation (V<sub>R</sub> < 5V)
`Single diode configuration
`Optimized for OR-ing applications
`Ultra low forward voltage drop
`Guard ring for enhanced ruggedness and long term reliability
`High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
`Lead-Free ("PbF" suffix)