20L15TSPBF

Series: -
Manufacturer: Vishay Semiconductors
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Mounting Type: Surface Mount
Reverse Recovery Time (trr): -
Capacitance @ Vr, F: -
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 20A
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Supplier Device Package: D2PAK (SMD-220)
Current - Reverse Leakage @ Vr: 10mA @ 15V
Voltage - Forward (Vf) (Max) @ If: 410mV @ 19A


Features:

• 125 TJ operation (VR < 5 V)
• Single diode configuration
• Optimized for OR-ing applications
• Ultra low forward voltage drop
• Guard ring for enhanced ruggedness and long term reliability
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Lead (Pb)-free ("PbF" suffix)
• Designed and qualified for Q101 level




Specifications

PARAMETER	SYMBOL	TEST CONDITIONS		VALUES	UNITS
Maximum average forward current See fig. 5	IF(AV)	50 % duty cycle at TC = 85 , rectangular waveform		20	A
Maximum peak one cycle non-repetitive surge current See fig. 7	IFSM	5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse	Following any rated load condition and with rated VRRM applied	700
				330
Non-repetitive avalanche energy	EAS	TJ = 25 , IAS =2 A, L =6 mH		10	mJ
Repetitive avalanche current	IAR	Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical		2	A

Description

Schottky Rectifier, 20 A

The Schottky rectifier module 20L15TSPbF has been optimized for ultra low forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 junction temperature. Typical applications of 20L15TSPbF are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems.