DescriptionThe 20MT120UFP is designed as one kind of full bridge IGBT MTPs (ultrafast NPT IGBT) with current of 40A. Its benefits include optimized for welding, UPS, SMPS applications, outstanding ZVS, hard switching operation, rugged with ultrafast performance and direct mounting to heatsink.20...
20MT120UFP: DescriptionThe 20MT120UFP is designed as one kind of full bridge IGBT MTPs (ultrafast NPT IGBT) with current of 40A. Its benefits include optimized for welding, UPS, SMPS applications, outstanding...
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DescriptionThe 20MT120UFAPbF is designed as one kind of full bridge IGBT MTPs (ultrafast NPT IGB...
The 20MT120UFP is designed as one kind of "full bridge" IGBT MTPs (ultrafast NPT IGBT) with current of 40A. Its benefits include optimized for welding, UPS, SMPS applications, outstanding ZVS, hard switching operation, rugged with ultrafast performance and direct mounting to heatsink.
20MT120UFP has twelve features. (1)Ultrafast non punch through (NPT) technology. (2)Positive Vce(on) temperature coefficient. (3)10s short circuit capability. (4)HEXFRED antiparallel diodes with ultrasoft reverse recovery. (5)Low diode Vf. (6)Square RBSOA. (7)Aluminum nitride DBC. (8)Very low stray inductance design for high speed operation. (9)UL approved file E78996. (10)Speed 8kHz to 60kHz. (11)Compliant to RoHS directive 2002/95/EC. (12)Designed and qualified for industrial level. Those are all the main features.
Some absolute maximum ratings have been concluded into several points as follow. (1)Its collector to emitter breakdown voltage would be 1200V. (2)Its continuous collector current would be 40A at Tc=25°C and would be 20A at Tc=106°C. (3)20MT120UFP's pulsed collector current would be 100A. (4)Its clamped inductive load current would be 100A. (5)Its diode continuous forward current would be 25A. (6)Its diode maximum forward current would be 100A. (7)Its gate to emitter voltage would be +/-20V. (8)Its RMS isolation voltage would be 2500V. (9)Its maximum power dissipation (only IGBT) would be 240W at Tc=25°C and would be 96W at Tc=100°C. 20MT120UFP should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 1200V. (2)Its temperature coefficient of breakdown voltage would be typ +1.3V/°C. (3)20MT120UFP's gate threshold voltage would be min 4V and max 6V. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!