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20TT100

Features: • 175 °C high performance Schottky diode• Very low forward voltage drop• Extremely low reverse leakage• Optimized VF vs. IR trade off for high efficiency• Increased ruggedness for reverse avalanche capability• RBSOA available• Negligible switchin...

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20TT100: Features: • 175 °C high performance Schottky diode• Very low forward voltage drop• Extremely low reverse leakage• Optimized VF vs. IR trade off for high efficiency• Inc...

20TT100 Data Sheet

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Part Number:
20TT100
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized VF vs. IR trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level




Application

• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems




Specifications

PARAMETER
SYMBOL
 TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
IF(AV)
 50 % duty cycle at TC = 160 °C, rectangular waveform
20
A
Maximum peak one cycle A
non-repetitive surge current
IFSM
 5 s sine or 3 s rect. pulse
10 ms sine or 6 ms rect. pulse		 Following any rated load
condition and with rated
VRRM applied

900
300
Non-repetitive avalanche energy
EAS
 TJ = 25 °C, IAS = 1.5 A, L = 60 mH
67.5
mJ
Repetitive avalanche current
IAR
 Limited by frequency of operation and time pulse duration so
that TJ < TJ max. IAS at TJ max. as a function of time pulse
See fig. 8
IAS at
TJ max.
A





Description

High Performance Schottky Generation 5.0, 20 A 20TT100




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