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23A017

Specifications Maximum Power Dissipation @ 25 6.0 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage 50 Volts BVeboEmitter to Base Voltage 3.5 Volts Ic Collector Current 800 mA Maximum Temperatures Storage Temperature - 65 to + 200 Operating Junct...

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SeekIC No. : 004216343 Detail

23A017: Specifications Maximum Power Dissipation @ 25 6.0 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage 50 Volts BVeboEmitter to Base Voltage 3.5 Volts Ic Collect...

23A017 Data Sheet

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Part Number:
23A017
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Maximum Power Dissipation @ 25 6.0 Watts
Maximum Voltage and Current
BVces           Collector to Emitter Voltage 50 Volts
BVebo          Emitter to Base Voltage 3.5 Volts
Ic                 Collector Current 800 mA
Maximum Temperatures
Storage Temperature - 65 to + 200
Operating Junction Temperature + 200



Description

The 23A017 is a COMMON EMITTER transistor capable of providing 1.7 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. 23A017 utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed package.




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