24LC09ISN

The 24LC09ISN is designed as an 8Kbit electrically erasable PROM (EEPROM) designed to meet the advanced communication riser special interest group (ACR-SIG). 24LC09ISN is organized as four blocks of 256x8-bit memory that suports the 2-wore serial interface with a special address:1011. Low voltage design permits operation down to 2.5V with typical standby and active currents of only 5uA and 1mA, respectively.

24LC09ISN has many features. (1)Output slope control to eliminate ground bounce. (2)400KHz capability 2.5V to 5.5V. (3)Self-timed write cycle (including auto-erase). (4)Page-write buffer for up to 16 bytes. (5)2ms typical write cycle time for page-write. (6)Hardware write protect for entire memory. (7)Can be operated as a serial ROM. (8)Factory programming (QTP) available. (9)ESD protection >4000V. (10)1000000 erase/write cycles guaranteed. (11)Data retention >200 years. And so on.

Some absolute maximum ratings of 24LC09ISN have been concluded into several points as follow. (1)Its supply voltage Vcc would be 7.0V. (2)Its all inputs and outputs w.r.t. Vss would be from -0.3V to Vcc+1.0V. (3)Its storage temperature range would be from -65°C to 150°C. (4)Its ambient temperature with power applied would be from -65°C to 125°C. (5)Its soldering temperature of leads 10 seconds would be 300°C. (6)Its ESD protection on all pins would be would be >=4kV. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 24LC09ISN are concluded as follow. (1)Its high level input voltage would be min 0.7Vcc. (2)Its low level input voltage would be max 0.3Vcc. (3)Its hysteresis of schmitt trigger inputs would be min 0.05Vcc. (4)Its low level output voltage would be max 0.4V. (5)Its input leakage current would be min -10uA and max 10uA. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!