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25MT060WF

Features: • Gen. 4 Warp Speed IGBT Technology• HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery• Very Low Conduction and Switching Losses• Optional SMT Thermystor Inside• Aluminum Nitride DBC• Very Low Stray Inductance Design for High Speed Operati...

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SeekIC No. : 004217507 Detail

25MT060WF: Features: • Gen. 4 Warp Speed IGBT Technology• HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery• Very Low Conduction and Switching Losses• Optional SMT Thermyst...

25MT060WF Data Sheet

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Part Number:
25MT060WF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• Gen. 4 Warp Speed IGBT Technology
• HEXFRED TM Antiparallel Diodes with
   UltraSoft Reverse Recovery
• Very Low Conduction and Switching Losses
• Optional SMT Thermystor Inside
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
   High Speed Operation


Specifications

           Parameters
Max
Units
VCES         Collector-to-Emitter Voltage
600
V
IC           Continuos Collector Current
 
@ TC = 25 50
 
A
@ TC = 100
25
ICM          Pulsed Collector Current
200
ILM          Peak Switching Current
200
IF           Diode Continuous Forward Current           @ TC = 100
25
IFM          Peak Diode Forward Current
200
VGE          Gate-to-Emitter Voltage
± 20
V
VISOL        RMS Isolation Voltage, Any Terminal to Case, t = 1 min
2500
PD           Maximum Power Dissipation
@ TC = 25
900
W



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