25MT060WFAPbF

DescriptionThe 25MT060WFAPbF is designed as one kind of full bridge IGBT MTPs (warp speed IGBT) with current of 50A. 25MT060WFAPbF's benefits include optimized for welding, UPS, SMPS applications, low EMI, requires less snubbing, direct mounting to heatsink, PCB solderable terminals and very low...

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SeekIC No. : 004217508 Detail

25MT060WFAPbF: DescriptionThe 25MT060WFAPbF is designed as one kind of full bridge IGBT MTPs (warp speed IGBT) with current of 50A. 25MT060WFAPbF's benefits include optimized for welding, UPS, SMPS applications,...

floor Price/Ceiling Price

Part Number:
25MT060WFAPbF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Description

The 25MT060WFAPbF is designed as one kind of "full bridge" IGBT MTPs (warp speed IGBT) with current of 50A. 25MT060WFAPbF's  benefits include optimized for welding, UPS, SMPS applications, low EMI, requires less snubbing, direct mounting to heatsink, PCB solderable terminals and very low junction to case thermal resistance.

25MT060WFAPbF has ten features. (1)Generation 4 warp speed IGBT technology. (2)HEXFRED antiparallel diodes with ultrasoft reverse recovery. (3)Very low conduction and switching losses. (4)Optional SMT thermistor. (5)Al2O3 DBC. (6)Very low stray inductance design for high speed operation. (7)Speed 8kHz to 60kHz>20kHz hard switching, >200kHz resonant mode. (8)UL approved file E78996. (9)Compliant to RoHS directive 2002/95/EC. (10)Designed and qualified for industrial level. Those are all the main features.

Some absolute maximum ratings of 25MT060WFAPbFhave been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its continuous collector current would be 69A at Tc=25°C and would be 46A at Tc=80°C. (3)Its pulsed collector current would be 200A. (4)Its peak switching current would be 200A. (5)Its diode continuous forward current would be 25A. (6)Its peak diode forward current would be 200A. (7)Its gate to emitter voltage would be  +/-20V. (8)Its RMS isolation voltage would be 2500V. (9)Its maximum power dissipation per single IGBT would be 195W at Tc=25°C and would be 78W at Tc=100°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its temperature coefficient of breakdown voltage would be typ +0.6V/°C. (3)Its gate threshold voltage would be min 3V and max 6V. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!




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