25TTS..FP

Parameters

25TTS..FP

Units

Conditions

I_T(AV)      Max. Average On-state Current

16

A

@ T_C = 85° C, 180° conduction half sine wave

I_RMS        Max. RMS On-state Current

25

I_TSM        Max. Peak One Cycle Non-Repetitive
               Surge Current

300

10ms Sine pulse, rated V_RRMapplied

350

10ms Sine pulse, no voltage reapplied

I²t           Max. I²t for fusing

450

A²s

10ms Sinepulse, rated V_RRMapplied

630

10ms Sinepulse, novoltagereapplied

I²t        Max. I²t for fusing

6300

A²s

t = 0.1 to 10ms, no voltage reapplied

V_TM         Max. On-state Voltage Drop

1.25

V

@ 16A, T_J = 25°C

r_t             On-state slope resistance

12.0

mW

T_J = 125°C

V_T(TO)     Threshold Voltage

1.0

V

I_RM/I_DM   Max.Reverse and Direct
               Leakage Current

0.5

mA

T_J = 25 °C

V_R = rated V_RRM/ V_DRM

10

T_J = 125 °C

I_H          Holding Current

Typ.

Max.

mA

Anode Supply = 6V, Resistive load, Initial I_T=1A
25TTS08FP, 25TTS12FP
25TTS16FP

--

100

100

150

I_L         Max. Latching Current

200

mA

Anode Supply = 6V, Resistive load

dv/dt   Max. Rate of Rise of off-state Voltage

500

V/s

di/dt    Max. Rate of Rise of turned-on Current

150

A/s