28C04A

Features:

* Fast Read Access Time-150 ns
* CMOS Technology for Low Power Dissipation
- 30 mA Active
- 100 m A Standby
* Fast Byte Write Time-200 m s or 1 ms
* Data Retention >200 years
4
* Endurance - Minimum 10   Erase/Write Cycles
- Automatic Write Operation
- Internal Control Timer
- Auto-Clear Before Write Operation
- On-Chip Address and Data Latches
* Data Polling
* Chip Clear Operation
* Enhanced Data Protection
-VCC Detector
- Pulse Filter
- Write Inhibit
* 5-Volt-Only Operation
* Organized 512x8 JEDEC standard pinout
- 24-pin Dual-In-Line Package
- 32-pin PLCC Package
* Available for Extended Temperature Ranges:
- Commercial: 0  to +70

 - Industrial: -40  to +85

Pinout

Specifications

VCC and input voltages w.r.t. VSS.......-0.6V to + 6.25V
Voltage on OE w.r.t. VSS......................-0.6V to +13.5V
Output Voltage w.r.t. VSS.................-0.6V to VCC+0.6V
Storage temperature..........................-65  to +125
Ambient temp. with power applied.......-50  to +95


Description

The Microchip Technology Inc. 28C04A is a CMOS 4K non-volatile electrically Erasable and Programmable Read Only Memory (EEPROM). The 28C04A is accessed like a static RAM for the read or write cycles without the need of external components. During a "byte write", the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. To determine when a write cycle is complete, the 28C04A uses Data polling. Data polling allows the user to read the location last written to when the write operation is complete. CMOS design and processing enables this part to be used in systems where reduced power consumption and reliability are required. A complete family of packages is offered to provide the utmost flexibility in applications.