28F008SA

Features:

High-Density Symmetrically-Blocked Architecture
   -Sixteen 64-Kbyte Blocks
Extended Cycling Capability
   -100,000 Block Erase Cycles
   -1.6 Million Block Erase Cycles per Chip
Automated Byte Write and Block Erase
   -Command User Interface
   -Status Register
System Performance Enhancements
    -RY/BY Status Output
    -Erase Suspend Capability
Deep Power-Down Mode
    -0.20 AICC Typical
 Very High-Performance Read
    -85 ns Maximum Access Time
 SRAM-Compatible Write Interface
Hardware Data Protection Feature
    -Erase/Write Lockout during Power Transitions
Industry Standard Packaging
    -40-Lead TSOP, 44-Lead PSOP
ETOX III Nonvolatile Flash Technology
    -12V Byte Write/Block Erase


Pinout




Specifications

Operating Temperature
    During Read  ...............0to 70⁽¹⁾
    During Block Erase/Byte Write .......0to 70§C
Temperature Under Bias  ......... -10to 80§C
Storage Temperature .......... -65to 125§C
Voltage on Any Pin
    (except V_CC and VPP)
    with Respect to GND ......... -2.0V to 7.0V⁽²⁾
V_PP Program Voltage with
    Respect to GND during
    Block Erase/Byte Write ...... -2.0V to 14.0V^{(2, 3)}
V_CC Supply Voltage
    with Respect to GND  ......... -2.0V to a7.0V⁽²⁾
Output Short Circuit Current ..... ......100 mA⁽⁴⁾


Description

Intel's 28F008SA 8-Mbit FlashFileTM Memory is the highest density nonvolatile read/write solution for sol-id-state storage. The 28F008SA's extended cycling, symmetrically blocked architecture, fast access time,write automation and low power consumption provide a more reliable, lower power, lighter weight and higherperformance alternative to traditional rotating disk technology. The 28F008SA brings new capabilities to porta-ble computing. Application and operating system software stored in resident flash memory arrays provide instant-on, rapid execute-in-place and protection from obsolescence through in-system software updates. Resident software also extends system battery life and increases reliability by reducing disk drive accesses.

For high density data acquisition applications, the 28F008SA offers a more cost-effective and reliable alterna-tive to SRAM and battery. Traditional high density embedded applications, such as telecommunications, can take advantage of the 28F008SA's nonvolatility, blocking and minimal system code requirements for flexible firmware and modular software designs.

The 28F008SA is offered in 40-lead TSOP (standard and reverse) and 44-lead PSOP packages. Pin assign-ments simplify board layout when integrating multiple devices in a flash memory array or subsystem. This device uses an integrated Command User Interface and state machine for simplified block erasure and byte write. The 28F008SA memory map consists of 16 separately erasable 64-Kbyte blocks.

Intel's 28F008SA employs advanced CMOS circuitry for systems requiring low power consumption and noise immunity. Its 85 ns access time provides superior performance when compared with magnetic storage media.A deep powerdown mode lowers power consumption to 1 mW typical thru VCC, crucial in portable computing,handheld instrumentation and other low-powerapplications. The RPÝ power control input also provides absolute data protection during system powerup/down.

Manufactured on Intel's 0.8 micron ETOX process, the 28F008SA provides the highest levels of quality,reliability and cost-effectiveness.