28F016XD

Features:

85 ns Access Time (t_RAC)
 Supports both Standard and Fast-Page-Mode Accesses
Multiplexed Address Bus
  RAS# and CAS# Control Inputs
No-Glue Interface to Many Memory Controllers
SmartVoltage Technology
 User-Selectable 3.3V or 5V VCC
 User-Selectable 5V or 12V VPP
0.33 MB/sec Write Transfer Rate
x16 Architecture
56-Lead TSOP Type I Package
Backwards-Compatible with 28F008SA Command Set
2 µA Typical Deep Power-Down Current
1 mA Typical ICC Active Current in Static Mode
32 Separately-Erasable/Lockable 64-Kbyte Blocks
1 Million Erase Cycles per Block
State-of-the-Art 0.6 µm ETOX™ IV Flash Technology


Pinout




Specifications

Temperature Under Bias ........................0°C to +80°C
Storage Temperature ......................65°C to +125°C

Sym	Parameter	Notes	Min	Max	Units	Test Conditions
TA	Operating Temperature, Commercial	1	0	70	°C	Ambient Temperature
VCC	VCC with Respect to GND	2	0.2	7.0	V
VPP	VPP Supply Voltage with Respect to GND	2,3	0.2	14.0	V
V	Voltage on any Pin (except VCC,VPP) with Respect to GND	2,5	0.5	VCC + 0.5	V
I	Current into any Non-Supply Pin	5		± 30	mA
IOUT	Output Short Circuit Current	4		100	mA

V_CC = 5.0V ± 0.5V Systems

Sym	Parameter	Notes	Min	Max	Units	Test Conditions
TA	Operating Temperature, Commercial	1	0	70	°C	Ambient Temperature
VCC	VCC with Respect to GND	2	0.2	7.0	V
VPP	VPP Supply Voltage with Respect to GND	2,3	0.2	14.0	V
V	Voltage on any Pin (except VCC,VPP) with Respect to GND	2,5	2.0	7.0	V
I	Current into any Non-Supply Pin	5		± 30	mA
IOUT	Output Short Circuit Current	4		100	mA

Description

Intel's 28F016XD 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary high-performance products. Combining its DRAM-like read performance and interface with the intrinsic nonvolatility of flash memory, the 28F016XD eliminates the traditional redundant memory paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory, such as DRAM, for improved system performance. The innovative capabilities of the 28F016XD enable the design of direct-execute code and mass storage data/file flash memory systems.

The 28F016XD's DRAM-like interface with a multiplexed address bus, flexible V_CC and V_PP voltages, power saving features, extended  cycling, fast program and read performance, symmetrically-blocked architecture, and selective block locking provide a highly flexible memory component suitable for resident flash component arrays on the system board or SIMMs. The DRAM-like interface with RAS# and CAS# control inputs allows for easy migration to flash memory in existing DRAM-based systems. The 28F016XD's dual read voltage allows the same component to operate at either 3.3V or 5.0V V_CC. Programming voltage at 5.0V VPP minimizes external circuitry in minimal-chip, space critical designs, while the 12.0V V_PP option maximizes program/erase performance. The x16 architecture allows optimization of the memory-to-processor interface.Its high read performance combined with flexible block locking enable both storage and execution of operating systems/application software and fast access to large data tables. The 28F016XD is manufactured on Intel's 0.6 µm ETOX IV process technology.