28F020

Features:

Flash Electrical Chip-Erase
2 Second Typical Chip-Erase
Quick-Pulse Programming Algorithm
 10 µS Typical Byte-Program
 4 second Chip-Program
100,000 Erase/Program Cycles
 2.0 V ±5% VPP
 High-Performance Read
 90 ns Maximum Access Time
CMOS Low Power Consumption
 10 mA Typical Active Current
 50 µA Typical Standby Current
 0 Watts Data Retention Power
Integrated Program/Erase Stop Timer
Command Register Architecture for
   Microprocessor/Microcontroller
   Compatible Write Interface
Noise Immunity Features
 ±10% VCC Tolerance
 Maximum Latch-Up Immunity through EPI Processing
ETOX™ Nonvolatile Flash Technolog
 EPROM-Compatible Process Base
 High-Volume Manufacturing Experience
 JEDEC-Standard Pinouts
 32-Pin Plastic Dip
 32-Lead PLCC
 32-Lead TSOP
   (See Packaging Spec., Order #231369)
Extended Temperature Options


Pinout




Specifications

Operating Temperature
      During Read ..........................0 °C to +70 °C⁽¹⁾
      During Erase/Program...........0 °C to +70 °C⁽¹⁾
Operating Temperature
      During Read .....................40 °C to +85 °C⁽²⁾
      During Erase/Program......40 °C to +85 °C⁽²⁾
Temperature Under Bias.........10 °C to +80 °C⁽¹⁾
Temperature Under Bias.........50 °C to +95 °C⁽²⁾
Storage Temperature................65 °C to +125 °C
Voltage on Any Pin with
      Respect to Ground ...............2.0 V to +7.0 V⁽²⁾
Voltage on Pin A9 with
      Respect to Ground ..........2.0 V to +13.5 V^(2,3)
VPP Supply Voltage with
      Respect to Ground
      During Erase/Program.....2.0 V to +14.0 V^(2,3)
VCC Supply Voltage with
      Respect to Ground ..............2.0 V to +7.0 V⁽²⁾
Output Short Circuit Current.................... 100 mA⁽⁴⁾


Description

Intel's 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-board during subassembly test; in-system during final test; and in-system after sale. The 28F020 increases memory flexibility, while contributing to time  and cost savings.

The 28F020 is a 2048-kilobit nonvolatile memory organized as 262,144 bytes of eight bits. Intel's 28F020 is offered in 32-pin plastic DIP, 32-lead PLCC, and 32-lead TSOP packages. Pin assignments conform to JEDEC standards for byte-wide EPROMs.

Extended erase and program  cycling capability is designed into Intel's ETOX™ (EPROM Tunnel Oxide) process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field combine to extend reliable  cycling beyond that of traditional EEPROMs. With the 12.0 V VPP supply, the 28F020 performs 100,000 erase and program  cycles-well within the time limits of the quick-pulse programming and quick-erase algorithms.

Intel's 28F020 employs advanced CMOS circuitry for  systems requiring high-performance access speeds,low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates into power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved through Intel's unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on address and data pins, from 1 V to V_CC + 1 V.

With Intel's ETOX process technology base, the 28F020 builds on years of EPROM experience to yield the highest levels of quality, reliability, and cost-effectiveness.