2931-150R3

SpecificationsMaximum Power DissipationDevice Dissipation @ 25°C1................................ 500 WMaximum Voltage and CurrentCollector to Base Voltage (BVces)..........................65 VEmitter to Base Voltage (BVebo)...........................3.0 VCollector Current (Ic).......................

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SeekIC No. : 004218315 Detail

2931-150R3: SpecificationsMaximum Power DissipationDevice Dissipation @ 25°C1................................ 500 WMaximum Voltage and CurrentCollector to Base Voltage (BVces)..........................65 VEmitt...

floor Price/Ceiling Price

Part Number:
2931-150R3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Description



Specifications

Maximum Power Dissipation
Device Dissipation @ 25°C1 ................................   500 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)   ..........................65 V
Emitter to Base Voltage (BVebo)  ...........................  3.0 V
Collector Current (Ic)    ........................................... 15.0 A
Maximum Temperatures
Storage Temperature  ...........................................  -65 to +200 °C
Operating Junction Temperature         +200 °C



Description

The 2931-150 is an internally matched, COMMON BASE bipolar transistor capable of providing 150 Watts of pulsed RF output power at 50s pulse width,
4% duty factor across the 2900 to 3100 MHz band. The transistor prematch and test fixture has been optimized through the use of Pulsed Automated Load Pull. This hermetic ceramic sealed transistor is specifically designed for S-band radar applications. 2931-150R3 utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness.




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