29DL323TE-90

The 29DL323TE-90 is designed as one kind of 32M-bit, 3.0 V-only Flash memory that organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.

Features of the 29DL323TE-90 are:(1)multiple devices available with different bank sizes;(2)host system can program or erase in one bank, then immediate-ly and simultaneously read from the other bank;(3)zero latency between read and write operations;(4)minimizes system level power requirements;(5)80 ns maximum access time;(6)eight 4K word and sixty-three 32K word sectors in word mode;(7)any combination of sectors can be concurrently erased. Also supports full chip erase;(8)automatically pre-programs and erases the chip or any sector;(9)hardware method for detection of program or erase cycle completion;(10)suspends the erase operation to allow a read data and/or program in another sector within the same device.

The absolute maximum ratings of the 29DL323TE-90 can be summarized as:(1)storage temperature:-55 to +125°C;(2)ambient temperature with power applied:-40 to +85°C;(3)power supply voltage:-0.5 to +4.0 V.If you want to know more information such as the electrical characteristics about the 29DL323TE-90,please download the datasheet in www.seekic.com or www.chinaicmart.com .