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2DB1132P-13

Transistors Bipolar (BJT) 1000W -32Vceo

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SeekIC No. : 00208229 Detail

2DB1132P-13: Transistors Bipolar (BJT) 1000W -32Vceo

2DB1132P-13 Data Sheet

floor Price/Ceiling Price

US $ .14~.32 / Piece | Get Latest Price
Part Number:
2DB1132P-13
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.32
  • $.25
  • $.17
  • $.14
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 32 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 82 at 100 mA at 3 V Configuration : Single Dual Collector
Maximum Operating Frequency : 190 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-89
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Package / Case : SOT-89
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 1 A
Configuration : Single Dual Collector
Collector- Emitter Voltage VCEO Max : 32 V
Maximum Operating Frequency : 190 MHz
DC Collector/Base Gain hfe Min : 82 at 100 mA at 3 V


Parameters:

Technical/Catalog Information2DB1132P-13
VendorDiodes Inc
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)32V
Current - Collector (Ic) (Max)1A
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 100mA, 3V
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Frequency - Transition190MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-89-3, TO-243-3
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2DB1132P 13
2DB1132P13



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