2ED020I12-F

Series: -
Type: -
On-State Resistance: -
Current - Output / Channel: -
Current - Peak Output: -
Number of Outputs: 2
Mounting Type: Surface Mount
Number of Configurations: 1
Operating Temperature: -40°C ~ 125°C
Input Type: Non-Inverting
Current - Peak: 1A
Configuration: Half Bridge
Packaging: Tape & Reel (TR)
Delay Time: 85ns
High Side Voltage - Max (Bootstrap): 1200V
Manufacturer: Infineon Technologies
Voltage - Supply: 14 V ~ 18 V
Package / Case: 20-SOIC (0.295", 7.50mm Width) 18 leads
Supplier Device Package: PG-DSO-18


Features:

• Floating high side driver
• Under-voltage lockout for both channels
• 3.3 V and 5 V TTL compatible inputs
• CMOS Schmitt-triggered inputs with internal pull-down
• CMOS Schmitt-triggered shutdown with internal pull-up
• Non-inverting inputs
• Interlocking inputs
• Dedicated shutdown input with internal pull-up
• IEC compliant (pending)
• UL recognized (pending)


Pinout




Specifications

Parameter	Symbol	Limit values		Unit	Remark
		min.	max.
High side ground	VGNDH	-1200	1200	V
High side supply voltage	VVSH	-0.3	20	V	1)
High side gate driver output	VOutH	-0.3	VVSH + 0.3	V	1)
Low side ground	VGNDL	-0.3	5.3	V
Low side supply voltage	VVSL	-0.3	20	V	2)
Low side gate driver output	VOutL	-0.3	VVSL + 0.3	V	3)
Logic input voltages (InH, InL, /SD)	VIn	-0.3	5.3	V
OP input voltages (OP-, OP+)	VOP	-0.3	5.3	V	4)
OP output voltage	VOPO	-0.3	5.3	V
CP input voltages (CP-, CP+)	VCP	-0.3	5.3	V	4)
CP output voltage	V/CPO	-0.3	5.3	V
CP output max. sink current	I/CPO	-	5	mA
High side ground, voltage transient	dVGNDH/dt	-50	50	V/ns
Package power dissipation @TA=25°C	PD	-	2	W	5)
Thermal resistance (both chips active), junction to ambient	RTHJA	-	60	K/W	6)
Thermal resistance (high side chip), junction to ambient	RTHJA(HS)	-	110	K/W	6)
Thermal resistance (low side chip), junction to ambient	RTHJA(LS)	-	110	K/W	6)
Junction temperature	TJ	-	150
Storage temperature	TS	-55	150

1) with reference to high side GNDH
2) with reference to both GND and GNDL
3) with reference to low side ground GNDL
4) please note the different specifications for the operating range
5) considering RTHJA = 60 K/W, e.g. both chips active
6) device soldered to reference PCB without cooling area


Description

The 2ED020I12-F is a high voltage, high speed power IGBT and MOSFET driver of the eupec EiceDRIVER™ family with interlocking high and low side referenced output channels. The floating high side driver may be supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic input of each driver the 2ED020I12-F is equipped with a dedicated shutdown input. All logic inputs are compatible with 3.3 V and 5 V TTL. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.

Both drivers are designed to drive an n-channel power IGBT or MOSFET which operates up to 1200 V for 2ED020I12-F. In addition, a general purpose operational amplifier and a general purpose comparator are provided, which may be used e.g. for current measurement or over current detection.

Parameters:

Technical/Catalog Information	2ED020I12-F
Vendor	Infineon Technologies
Category	Integrated Circuits (ICs)
Configuration	Half Bridge
Voltage - Supply	14 V ~ 18 V
Current - Peak	1A
Delay Time	85ns
Package / Case	DSO-20 (18 Leads)
Packaging	Tape & Reel (TR)
Number of Outputs	2
Input Type	Non-Inverting
Number of Configurations	1
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	1200V
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2ED020I12 F 2ED020I12F