2MBI75N-120

The 2MBI75N-120 is one member of the 2MBI75 family which is designed as the IGBT module (N series) device that can be used in (1)high power switching; (2)A.C. motor controls; (3)D.C. motor controls; (4)uninterruptible power supply applications. Features of the 2MBI75N-120 are:(1)square RBSOA; (2)low saturation voltage; (3)less total power dissipation; (4)improved FWD characteristic; (5)minimized internal stray inductance; (6)overcurrent limiting function (4 to 5 times rated current).

The absolute maximum ratings of the 2MBI75N-120 can be summarized as:(1)Collector-Emitter Voltage: 1200 V;(2)Gate-Emitter Voltage: ±20 V;(3)Max. Power Dissipation: 600 W;(4)Operating Temperature: +150 °C;(5)Storage Temperature: -40 to +125 °C;(6)Isolation Voltage: 2500 V;(7)Screw Torque: 3.5 Nm.

The electrical characteristics of 2MBI75N-120 can be summarized as:(1)Zero Gate Voltage Collector Current: 1.0 mA;(2)Gate-Emitter Leackage Current: 15 A;(3)Gate-Emitter Threshold Voltage: 4.5 to 7.5 V;(4)Collector-Emitter Saturation Voltage: 3.3 V;(5)Turn-on Time: 0.65 to 1.2 us;(6)Diode Forward On-Voltage: 3.0 V;(7)Reverse Recovery Time: 350 ns;(8)Turn-off Time: 0.85 to 1.5 us. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .