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2N2905

Transistors Bipolar (BJT) USE 511-2N2905A TO-39 PNP GEN PUR SS

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SeekIC No. : 00215247 Detail

2N2905: Transistors Bipolar (BJT) USE 511-2N2905A TO-39 PNP GEN PUR SS

2N2905 Data Sheet

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Part Number:
2N2905
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/15

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Product Details

Quick Details

Transistor Polarity : PNP Mounting Style : Through Hole
Package / Case : TO 5 Packaging : Bulk    

Description

Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Transistor Polarity : PNP
Mounting Style : Through Hole
Packaging : Bulk
Package / Case : TO 5


Features:

· Radiation graphs available




Application

Designed for general purpose switching and amplifier applications.




Specifications

Parameter
Test conditions
Min
Max
Uni
BVCEO
IC = 10 mA, IB = 0
60
---
V dc
BVCBO
IC = 10 A, IE = 0
60
---
V dc
BVEBO
IE = 10 A, IC = 0
5.0
---
V dc
ICBO
VCB = 50 V, IE = 0
---
10
nA dc
hFE
IC = 150 mA dc, VCE = 10 V
100
300
---
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 s, duty cycle less than 2%.




Description

Chip type 2N2905 by Semicoa Semiconductors provides performance similar to these devices.




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