2N2920, US $ 11.81-12.4 , Central Semiconductor, 2N2920 DataSheet download, circuit diagram from SeekIC.com

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2N2920: Transistors Bipolar (BJT) NPN Low Noise

2N2920 Data Sheet

US $ 11.81~12.4 / Piece | Get Latest Price

Part Number:: 2N2920
Mfg:: Central Semiconductor
Supply Ability:: 5000

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US $.62 - .76 / Piece

Transistors Bipolar (BJT) PNP Gen Pur SS
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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	50 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	0.03 A
DC Collector/Base Gain hfe Min :	20	Configuration :	Dual
Maximum Operating Frequency :	60 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-78
Packaging :	Box

Description

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 50 V
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Configuration : Dual
DC Collector/Base Gain hfe Min : 20
Packaging : Box
Maximum Operating Frequency : 60 MHz
Maximum DC Collector Current : 0.03 A
Package / Case : TO-78

Specifications

	(Tamb = 25°C unless otherwise stated)	EACH SIDE	TOTAL DEVICE
V_CBO	Collector Base Voltage	60V
V_CEO	Collector Emitter Voltage 1	60V
V_EBO	Emitter Base Voltage	6V	500mW
I_C	Continuous Collector Current	30	2.86W / °C
P_D	Total Device Dissipation TAMB = 25 Derate above 25°C°C	300mW 1.72mW / °C	1.5W
P_D	Total Device Dissipation TC = 25°C Derate above 25°C	750mW 4.3mW / °C	8.6mW / °C
T_STG	Storage Temperature Range	65 to 200°C
T_L	Lead temperature (Soldering, 10 sec.)	300°C

NOTES
1. Base Emitter Diode Open Circuited.

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2N2920

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