2N3055

Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 7 V
Maximum DC Collector Current : 15 A
DC Collector/Base Gain hfe Min : 20
Maximum Operating Temperature : + 200 C
Maximum Operating Frequency : 3 MHz
Packaging : Bulk
Package / Case : TO-3


Application

DC Current Gain − hFE= 20−70 @ IC= 4 Adc
Collector−Emitter Saturation Voltage −VCE(sat)= 1.1 Vdc (Max) @ IC= 4 Adc
Excellent Safe Operating Area
Pb−Free Package is Available




Pinout






Specifications

Rating	Symbol	Value	Unit
Collector−Emitter Voltage	CEO	60	Vdc
Collector−Emitter Voltage	CER	70	Vdc
Collector−Base Voltage	CER	100	Vdc
Emitter−Base Voltage	EB	7	Vdc
Collector Current − Continuous	IC	15	Adc
Base Current	IB	7	Adc
Total Power Dissipation @ TC = 25 Derate above 25	PD	115 0.657	W W/°C
Operating and Storage Junction Tempera- ture Range	TJ, Tstg	65 to +200	°C

Parameters:

Technical/Catalog Information	2N3055
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	15A
Power - Max	115W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic	3V @ 3.3A, 10A
Frequency - Transition	-
Current - Collector Cutoff (Max)	700A
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N3055 2N3055 497 2612 5 ND 49726125ND 497-2612-5