Transistors Bipolar (BJT) NPN Power SW
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 80 V |
| Emitter- Base Voltage VEBO : | 6 V | DC Collector/Base Gain hfe Min : | 40 |
| Configuration : | Single | Maximum Operating Frequency : | 40 MHz |
| Mounting Style : | Through Hole | Package / Case : | TO-39 |
| Packaging : | Box |

| Ratings | Symbol | 2N3418, S 2N3420, S |
2N3419,S 2N3421,S |
Unit |
| Collector-Emitter Voltage | VCEO | 60 | 80 | Vdc |
| Collector-Base Voltage | VCBO | 85 | 125 | Vdc |
| Emitter-Base Voltage | VEBO | 8.0 | Vdc | |
| Collector Current tp£1.0 ms, duty cycle £ 50% |
Ic | 3.0 5.0 |
Adc | |
| Total Power Dissipation @ TA = +250C(1) @ TC = +10000C(2) |
PT | 1.0 15 |
W W/ | |
| Operating & Storage Temperature Range | Top Tstg | -65 to +200 | ||