Transistors Bipolar (BJT) PNP GP Power
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| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 60 V | ||
| Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 10 A | ||
| DC Collector/Base Gain hfe Min : | 50 | Maximum Operating Frequency : | 4 MHz | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-3 | Packaging : | Sleeve |
|
Parameter |
Symbol |
2N3791 | 2N3792 |
Unit |
| Collector to base voltage |
VCBO |
60 |
80 |
Vdc |
|
Collector to emitter voltage |
VCEO |
60 |
80 |
Vdc |
| Emitter-Base Voltage |
VEBO |
7.0 |
Vdc | |
| Base Current |
IB |
4.0 |
Adc | |
| Collector current |
IC |
10 |
Adc | |
| Total Power Dissipation @ TA = 250C (1) @ TC = 250C (2) |
PT |
5.0 |
W | |
|
85.7 |
W | |||
| Operating & Storage Junction Temperature Range |
Tstg,Tj |
-65 to +200 |
°C | |
1) Derate linearly @ 28.57 mW/0C for TA > +250C
2) Derate linearly @ 0.857 mW/0C for TC > +1000C