Transistors Bipolar (BJT) Low Noise Ampl
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| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 60 V |
| Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 0.05 A |
| DC Collector/Base Gain hfe Min : | 15 | Configuration : | Single |
| Maximum Operating Frequency : | 80 MHz | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | Through Hole | Package / Case : | TO-18 |
| Packaging : | Box |
• SILICON PLANAR EPITAXIAL PNP TRANSISTOR
• CECC SCREENING OPTIONS
• LOW NOISE AMPLIFIER
• Low Level Amplifier
• Instrumentation Amplifiers
• General Purpose
|
VCBO |
collector-base voltage |
60V |
|
VCEO |
collector-emitter voltage(IB = 0) |
60V |
|
VEBO |
emitter-base voltage(IB = 0) |
5V |
|
IC |
Collector Current |
50mA |
|
PD |
Total Device Dissipation @ TA = 25°C Derate above 25°C |
360mW |
|
2.06mW / °C | ||
|
PD |
Total Device Dissipation @ TC = 25°C Derate above 25°C. |
1.2W |
|
6.86mW / °C | ||
|
Tj,Tstg |
Storage Temperature |
65 to +200°C |
|
RJA |
Thermal Resistance Junction to Ambient |
0.49°C/mW |
|
RJC |
Thermal Resistance Junction to Case |
0.15°C/mW |