2N3799

Transistors Bipolar (BJT) Low Noise Ampl

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SeekIC No. : 00209772 Detail

2N3799: Transistors Bipolar (BJT) Low Noise Ampl

floor Price/Ceiling Price

US $ .82~.82 / Piece | Get Latest Price
Part Number:
2N3799
Mfg:
Central Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~2000
  • Unit Price
  • $.82
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 0.05 A
DC Collector/Base Gain hfe Min : 15 Configuration : Single
Maximum Operating Frequency : 80 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-18
Packaging : Box    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Maximum Operating Frequency : 80 MHz
Emitter- Base Voltage VEBO : 7 V
DC Collector/Base Gain hfe Min : 15
Packaging : Box
Package / Case : TO-18
Maximum DC Collector Current : 0.05 A


Features:

• SILICON PLANAR EPITAXIAL PNP TRANSISTOR
• CECC SCREENING OPTIONS
• LOW NOISE AMPLIFIER




Application

• Low Level Amplifier
• Instrumentation Amplifiers
• General Purpose




Specifications

VCBO
collector-base voltage
60V
VCEO
collector-emitter voltage(IB = 0)
60V
VEBO
emitter-base voltage(IB = 0)
5V
IC
Collector Current
50mA
PD
Total Device Dissipation @ TA = 25°C
Derate above 25°C
360mW
2.06mW / °C
PD
Total Device Dissipation @ TC = 25°C
Derate above 25°C.
1.2W
6.86mW / °C
Tj,Tstg
Storage Temperature
65 to +200°C
RJA
Thermal Resistance Junction to Ambient
0.49°C/mW
RJC
Thermal Resistance Junction to Case
0.15°C/mW



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