2N3799X Selling Leads, Price trend, 2N3799X DataSheet download, circuit diagram from SeekIC.com

Features: • SILICON PLANAR EPITAXIAL PNP TRANSISTOR• CECC SCREENING OPTIONS• LOW NOISE AMPLIFIERApplication• Low Level Amplifier• Instrumentation Amplifiers• General PurposeSpecifications VCBO collector-base voltage 60V VCEO collector-emitter v...

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SeekIC No. : 004218922 Detail

2N3799X: Features: • SILICON PLANAR EPITAXIAL PNP TRANSISTOR• CECC SCREENING OPTIONS• LOW NOISE AMPLIFIERApplication• Low Level Amplifier• Instrumentation Amplifiers• Gene...

2N3799X Data Sheet

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Part Number:: 2N3799X
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/4/18

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Recent History
What is this?

2N3700 evaluate
US $.36 - .47 / Piece

Transistors Bipolar (BJT) NPN General Purpose
2N3700DCSM evaluate
Features: • DUAL SILICON PLANAR EPITAXIAL NPNTRANSISTOR• HERMETIC CERAMIC SURFACE MOUN...
2N3700S evaluate
Specifications Ratings Symbol Value Unit Collector-Emitter Voltage VCEO 8...

Product Details

Description

Features:

• SILICON PLANAR EPITAXIAL PNP TRANSISTOR
• CECC SCREENING OPTIONS
• LOW NOISE AMPLIFIER

Application

• Low Level Amplifier
• Instrumentation Amplifiers
• General Purpose

Specifications

V_CBO	collector-base voltage	60V
V_CEO	collector-emitter voltage(I_B = 0)	60V
V_EBO	emitter-base voltage(I_B = 0)	5V
I_C	Collector Current	50mA
P_D	Total Device Dissipation @ T_A = 25°C Derate above 25°C	360mW
P_D	Total Device Dissipation @ T_A = 25°C Derate above 25°C	2.06mW / °C
P_D	Total Device Dissipation @ T_C = 25°C Derate above 25°C.	1.2W
P_D	Total Device Dissipation @ T_C = 25°C Derate above 25°C.	6.86mW / °C
T_j,T_stg	Storage Temperature	65 to +200°C
R_JA	Thermal Resistance Junction to Ambient	0.49°C/mW
R_JC	Thermal Resistance Junction to Case	0.15°C/mW

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2N3799X

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