2N3926

The 2N3926 is a silicon epitaxial NPN planar transistor.Features of the 2N3926 are:(1)class C transistor;(2)frequency;(3)voltage;(4)power out;(5)power gain;(6)common emitter.

The absolute maximum ratings of the 2N3926 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the value is 36.0,the unit is V;(2):the symbol is VCEO,the parameter is collector-emitter voltage,the value is 18.0,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 4.0,the unit is V;(4)::the symbol is IC,the parameter is collector current(max.),the value is 1.5,the unit is A;(5):the symbol is PTOT,the parameter is total device dissipation at +25,the value is 11.6,the unit is W;(6):the symbol is TSTG,the parameter is storage temperature,the value is -65 to +150,the unit is ;(7):the symbol is TJ,the parameter is junction temperature,the value is +200,the unit is .

The electrical characteristics of the 2N3926 can be summarized as:(1):the symbol is BVCBO,the test conditions is IC=250A,VBE=0,the value is 36,the unit is V;(2):the symbol is BVEBO,the test conditions is IE=1mA,IC=0,the value is 4,the unit is V;(3):the symbol is BVCEO,the test conditions is IC=200mA,IB=0,the value is 18,the unit is V;(4):the symbol is ICBO,the test conditions is VCB=15V,IE=0,the value is 5,the unit is mA;(5):the symbol is hFE,the test conditions is VCE=5V,IC=100A,the value is 5.