Features: • Hermetically sealed TO-39 metal can• Also available in chip configuration• Chip geometry 3101• Reference document: MIL-PRF-19500/394Application• General purpose• Low power, High voltage• NPN silicon transistorSpecifications Parameter Symb...
2N4150S: Features: • Hermetically sealed TO-39 metal can• Also available in chip configuration• Chip geometry 3101• Reference document: MIL-PRF-19500/394Application• General pur...
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Parameter | Symbol | Rating | Unit |
Collector-emitter voltage | VCEO | 70 | Volts |
Collector-base voltage | VCBO | 100 | Volts |
Emitter-base voltage | VEBO | 10 | Volts |
Collector Current | IC | 10 | A |
Power Dissipation, TA = 25 Derate linearly above 25 |
PT | 1 5.7 |
W mW/ |
Power Dissipation, TA = 25 Derate linearly above 25 |
PT | 5 50 |
W mW/ |
Thermal Resistance | RJA RJC |
.175 .020 |
/W |
Operating Junction Temperature Storage Temperature |
TJ TSTG |
-65 to +200 |