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Part Number: 2N4150S

 

 

 

 

Description: Semicoa Semiconductors offers:• Screening and processing per MIL-PRF-19500 Appendix E• JAN level (2...


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2N4150S General Description


Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N4150SJ)
• JANTX level (2N4150SJX)
• JANTXV level (2N4150SJV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV
• Radiation testing (total dose) upon request

2N4150S Maximum Ratings

Parameter Symbol Rating Unit
Collector-emitter voltage VCEO 70 Volts
Collector-base voltage VCBO 100 Volts
Emitter-base voltage VEBO 10 Volts
Collector Current IC 10 A
Power Dissipation, TA = 25
Derate linearly above 25
PT 1
5.7

W
mW/
Power Dissipation, TA = 25
Derate linearly above 25
PT 5
50
W
mW/
Thermal Resistance RJA
RJC
.175
.020
/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG
-65 to +200

2N4150S Features

• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 3101
• Reference document: MIL-PRF-19500/394

2N4150S Typical Application

• General purpose
• Low power, High voltage
• NPN silicon transistor

2N4150S datasheet

2N4150S
PDF/DataSheet Download

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