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2N4150S

Features: • Hermetically sealed TO-39 metal can• Also available in chip configuration• Chip geometry 3101• Reference document: MIL-PRF-19500/394Application• General purpose• Low power, High voltage• NPN silicon transistorSpecifications Parameter Symb...

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SeekIC No. : 004219001 Detail

2N4150S: Features: • Hermetically sealed TO-39 metal can• Also available in chip configuration• Chip geometry 3101• Reference document: MIL-PRF-19500/394Application• General pur...

2N4150S Data Sheet

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Part Number:
2N4150S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 3101
• Reference document: MIL-PRF-19500/394


Application

• General purpose
• Low power, High voltage
• NPN silicon transistor


Specifications

Parameter Symbol Rating Unit
Collector-emitter voltage VCEO 70 Volts
Collector-base voltage VCBO 100 Volts
Emitter-base voltage VEBO 10 Volts
Collector Current IC 10 A
Power Dissipation, TA = 25
Derate linearly above 25		 PT 1
5.7
W
mW/
Power Dissipation, TA = 25
Derate linearly above 25		 PT 5
50		 W
mW/
Thermal Resistance RJA
RJC		 .175
.020		 /W
Operating Junction Temperature
Storage Temperature		 TJ
TSTG		 -65 to +200



Description

Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N4150SJ)
• JANTX level (2N4150SJX)
• JANTXV level (2N4150SJV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV
• Radiation testing (total dose) upon request


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