2N4410, US $ .13-.17 , Central Semiconductor, 2N4410 DataSheet download, circuit diagram from SeekIC.com

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2N4410: Transistors Bipolar (BJT) NPN Low Lvl

2N4410 Data Sheet

US $ .13~.17 / Piece | Get Latest Price

Part Number:: 2N4410
Mfg:: Central Semiconductor
Supply Ability:: 5000

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Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	80 V
Emitter- Base Voltage VEBO :	5 V	DC Collector/Base Gain hfe Min :	60 at 10 mA at 1 V
Configuration :	Single	Maximum Operating Frequency :	60 MHz
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Box

Description

Maximum DC Collector Current :
Maximum Operating Temperature :
Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 80 V
Packaging : Box
Maximum Operating Frequency : 60 MHz
DC Collector/Base Gain hfe Min : 60 at 10 mA at 1 V

Specifications

Ratings	Symbol	Value	Unit
Collector-Emitter Voltage	V_CEO	80	Vdc
Collector-Base Voltage	V_CBO	120	Vdc
Emitter-Base Voltage	V_EBO	5.0	Vdc
Collector Current- Continuous	I_C	250	mAdc
Total Device Dissipation @ T_A = 25°C Derate above 25°C	PD	625 5.0	mW mW/°C
Total Device Dissipation @ T_C = 25°C Derate above 25°C	PD	1.5 12	Watts mW/°C
Operating & Storage Junction Temperature Range	T_j, T_stg	55 to +150	⁰C

Parameters:

Technical/Catalog Information	2N4410
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	200mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic	800mV @ 100A, 1mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N4410 2N4410

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2N4410

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