Transistors Bipolar (BJT) PNP GP Power
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| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 40 V | ||
| Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 5 A | ||
| DC Collector/Base Gain hfe Min : | 25 | Maximum Operating Frequency : | 4 MHz | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-3 | Packaging : | Sleeve |
|
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT | |
|
VCBO |
Collector-base voltage |
2N4904 2N4905 2N4906 |
Open emitter |
-40 -60 -80 |
V |
|
VCEO |
Collector-emitter voltage |
2N4904 2N4905 2N4906 |
Open base |
-40 -60 -80 |
V |
|
VEBO |
Emitter-base voltage |
Open collector |
-5 |
V | |
|
IC |
Collector current |
-5 |
A | ||
|
IB |
Base current |
-1 |
|||
|
PD |
Total power dissipation |
TC=25 |
87.5 |
W | |
|
Tj |
Junction temperature |
200 |
|||
|
Tstg |
Storage temperature |
-65~200 |
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