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Part Number: 2N5109UB

 

 

 

 

Description: Semicoa Semiconductors offers:• Screening and processing per MIL-PRF-19500 Appendix E• JAN level (2...


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2N5109UB General Description


Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5109UBJ)
• JANTX level (2N5109UBJX)
• JANTXV level (2N5109UBJV)
• JANS level (2N5109UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS
• Radiation testing (total dose) upon request

2N5109UB Maximum Ratings

Characteristics Symbol Rating Unit
Collector-base voltage VCBO 20 Volts
Collector-emitter voltage VCEO 40 Volts
Emitter-base voltage VEBO 3 Volts
Collector current IC 400 mA
Power Dissipation, TA = 25
Derate linearly above 25
PT 1
5.71
W
mW/
Power Dissipation, TC = 25
Derate linearly above 25
PT 2.9
16.6
W
mW/
Thermal Resistance RJA 175 /W
Operating Junction Temperature TJ -65 to +200
Storage Temperature Tstg -65 to +200

2N5109UB Features

• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 1009
• Reference document:
MIL-PRF-19500/453

2N5109UB Typical Application

• General purpose
• VHF-UHF amplifier transistor
• NPN silicon transistor

2N5109UB datasheet

2N5109UB
PDF/DataSheet Download

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