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Part Number: 2N5153L

 

 

 

 

 

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2N5153L Maximum Ratings

Rating Symbol Rating Unit
Collector-Emitter Voltage VCEO 80 V
Collector-Base Voltage VCBO 100 V
Emitter-Base Voltage VEBO 5.5 V
Collector Current, Continuous IC 2 A
Collector Current, PW < 8.3 ms, < 1% duty cycle IC 10 A
Reverse Pulse Energy   15 mJ
Power Disipation TA = 25 ambient
Derate above 25
PT 1.0
5.7
Watt
mW/
Operating Junction Temperature TJ -65 to +200
Storage Temperature TSTG -65 to +200

2N5153L Features

Silicon power transistor for use in high speed switching applications.
Housed in a TO-5 case.
Also available in chip form using the 9702 chip geometry.
The Min and Max limits shown are per MIL-PRF-19500/545 which Semicoa meets in all cases.

2N5153L datasheet

2N5153L
PDF/DataSheet Download

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2N5153L Relative Products

  • 2N5153

    2N5153

    The 2N5151 and the 2N5153 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case intended for use in switching applications. The complementary NPN types are the 2N5152 and 2N5154 respectively

  • 2N5152L

    2N5152L

  • 2N5152

    2N5152

  • 2N5151L

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  • 2N5151

    2N5151

    The 2N5151 and the 2N5153 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case intended for use in switching applications. The complementary NPN types are the 2N5152 and 2N5154 respectively

  • 2N5116

    2N5116

    2N5116 Ideal for inverting switching or "Virtual Gnd" switching into inverting input of Op. Amp. No driver is required and ±10VAC signals can be handled using only +5V logic (TTL or CMOS).

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