2N5154

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 80 V
Packaging : Box
Maximum DC Collector Current : 2 A
Maximum Operating Frequency : 70 MHz
Package / Case : TO-39
DC Collector/Base Gain hfe Min : 50 at 50 mA at 5 V


Features:

Silicon power transistor for use in high speed switching applications.
Housed in a TO-39 case.
Also available in chip form using the 9201 chip geometry.
The Min and Max limits shown are per MIL-PRF-19500/544 which Semicoa meets in all cases.


Specifications

Rating	Symbol	Rating	Unit
Collector-Emitter Voltage	VCEO	80	V
Collector-Base Voltage	VCBO	100	V
Emitter-Base Voltage	VEBO	5.5	V
Collector Current, Continuous	IC	2	A
Collector Current, PW < 8.3 ms, < 1% duty cycle	IC	10	A
Reverse Pulse Energy		15	mJ
Power Disipation TA = 25 ambient Derate above 25	PT	1.0 5.7	Watt mW/
Operating Junction Temperature	TJ	-65 to +200
Storage Temperature	TSTG	-65 to +200