2N5195

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Maximum DC Collector Current : 4 A
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
DC Collector/Base Gain hfe Min : 20
Collector- Emitter Voltage VCEO Max : 80 V
Maximum Operating Frequency : 2 MHz (Min)
Package / Case : SOT-32


Features:

·Pb−Free Packages are Available*




Specifications

Rating	Symbol	2N5194	2N5195	Unit
Collector-Emitter Voltage	VCEO	60	80	Vdc
Collector-Base Voltage	VCB	60	80	Vdc
Emitter-Base Voltage	VEB	5.0		Vdc
Collector Current	LC	4.0		Adc
Base Current	LB	1.0		Adc
Total Device Dissipation @ TC=25 Derate above 25	PD	40 320		W W/
Operating and Storage Junction Temperature Range	TJ,Tstg	-65 to +150		/W

Description

These devices 2N5195 are designed for use in power amplifier and switching circuits; excellent safe area limits. Complement to NPN 2N5191, 2N5192.

Parameters:

Technical/Catalog Information	2N5195
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	4A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 10.5A, 2V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 1A, 4A
Frequency - Transition	2MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	SOT-32-3, TO-126-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N5195 2N5195 497 2585 5 ND 49725855ND 497-2585-5