Transistors Bipolar (BJT) 30A 60V 200W NPN
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 60 V | ||
| Maximum DC Collector Current : | 30 A | DC Collector/Base Gain hfe Min : | 15 | ||
| Configuration : | Single | Maximum Operating Frequency : | 2 MHz (Min) | ||
| Maximum Operating Temperature : | + 200 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-204 | Packaging : | Tray |
| Technical/Catalog Information | 2N5302G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Current - Collector (Ic) (Max) | 30A |
| Power - Max | 200W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 15A, 2V |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 1A, 10A |
| Frequency - Transition | 2MHz |
| Current - Collector Cutoff (Max) | 5mA |
| Mounting Type | Chassis Mount |
| Package / Case | TO-204, TO-3 |
| Packaging | Tray |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2N5302G 2N5302G 2N5302GOS ND 2N5302GOSND 2N5302GOS |