2N5302

Emitter- Base Voltage VEBO :
Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
Maximum Operating Frequency : 2 MHz (Min)
DC Collector/Base Gain hfe Min : 40
Maximum DC Collector Current : 30 A


Application

·For use in power amplifier and switching circuits applications.




Specifications

SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
VCBO	Collector to base voltage 2N5301 2N5302 2N5303	Open emitter	200 250 300	V
VCEO	Collector to emitter voltage 2N5301 2N5302 2N5303	Open base	125 175 225	V
VEBO	Emitter to base voltage	Open collector	7	V
IC	Collector Current 2N5301 2N5302 2N5303		4	A
IB	Base current		7.5	A
PD	Total power dissipation	TC=25	31.25 1.67	W
Tj	Junction temperature		150
Tstg	Storage temperaturerange		-65~150

Description

·With TO-3 package
·Complement to type 2N4398/4399/5745
·Low collector/saturation voltage
·Excellent safe operating area

2N5302


Parameters:

Technical/Catalog Information	2N5302
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	30A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 15A, 2V
Vce Saturation (Max) @ Ib, Ic	700mV @ 1A, 10A
Frequency - Transition	2MHz
Current - Collector Cutoff (Max)	5mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N5302 2N5302 2N5302OS ND 2N5302OSND 2N5302OS