2N5401

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel


Features:

Pb−Free Packages are Available*




Pinout






Specifications

Rating	Symbol	2N5400	2N5401	Unit
Collector to base voltage	VCBO	120	150	Vdc
Collector to emitter voltage	VCEO	130	160	Vdc
Emitter-Base Voltage	VEBO	5.0		Vdc
Collector Current − Continuous	IC	600		mAdc
Total Device Dissipation @ TA = 25°C Derate above 25°C	PD	625		mW
		5.0		mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	1.5		Watts
		12		mW/°C
Operating & Storage Junction Temperature Range	Tstg,Tj	−55 to +150		°C

Description

Bipolar transistors 2N5401 , also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar because they have two kinds of carriers (hole, electron)




Parameters:

Technical/Catalog Information	2N5401
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	150V
Current - Collector (Ic) (Max)	600mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	200mV @ 1mA, 10mA
Frequency - Transition	300MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N5401 2N5401 2N5401OS ND 2N5401OSND 2N5401OS