2N5458

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Drain Source Voltage VDS : 25 V
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : 25 V
Package / Case : TO-92
Continuous Drain Current : 10 mA
Drain Current (Idss at Vgs=0) : 2 mA to 9 mA


Features:

(TA = 25 unless otherwise noted)
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Continuous Forward Gate Current . . . . . . . . . . . . . . . . 10mA
Storage Temperature Range . . . . . . . . . . . . . -65 to +150
Operating Temperature Range . . . . . . . . . . . -55 to +135
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW
Derate above 25 . . . . . . . . . . . . . . . . . . . . . . . . . 2.82mW/

NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Parameters:

Technical/Catalog Information	2N5458
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Drain (Idss) @ Vds (Vgs=0)	2mA @ 15V
Gate to Source Voltage (Vgs Max)	*
Input Capacitance (Ciss) @ Vds	7pF @ 15V
Power - Max	310mW
Packaging	Bulk
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Voltage - Cutoff (VGS off) @ Id	1V @ 10nA
Voltage - Breakdown (V(BR)GSS)	25V
Resistance - RDS(On)	-
Current Drain (Id) - Max	-
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N5458 2N5458 2N5458OS ND 2N5458OSND 2N5458OS