JFET P-Ch Junc FET
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| Transistor Polarity : | P-Channel | Drain Source Voltage VDS : | - 40 V |
| Drain Current (Idss at Vgs=0) : | 4 mA to 16 mA | Gate-Source Breakdown Voltage : | 40 V |
| Continuous Drain Current : | 5 mA | Configuration : | Single |
| Mounting Style : | Through Hole | Package / Case : | TO-92 |
| Packaging : | Box |
|
Symbol |
Parameter |
Value |
Units |
|
VDG VGS IGF TJ ,Tstg |
Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range |
- 40 40 10 -55 to +150 |
V V mA |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
| Technical/Catalog Information | 2N5460 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | - |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1mA @ 15V |
| Gate to Source Voltage (Vgs Max) | * |
| Input Capacitance (Ciss) @ Vds | 7pF @ 15V |
| Power - Max | 350mW |
| Packaging | Bulk |
| Package / Case | TO-92-3, TO-226AA (Straight Leads) |
| Voltage - Cutoff (VGS off) @ Id | 750mV @ 1A |
| Voltage - Breakdown (V(BR)GSS) | 40V |
| Resistance - RDS(On) | - |
| Current Drain (Id) - Max | - |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | 2N5460 2N5460 2N5460OS ND 2N5460OSND 2N5460OS |