Transistors Bipolar (BJT) 600mA 160V NPN
2N5550RLRA: Transistors Bipolar (BJT) 600mA 160V NPN
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 140 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.6 A |
DC Collector/Base Gain hfe Min : | 60 at 1 mA at 5 V | Configuration : | Single |
Maximum Operating Frequency : | 300 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-92 |
Packaging : | Reel |
The 2N5550RLRA is one member of the 2N5550 series.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).
Features of the 2N5550RLRA are:(1)Pb-free packages are available*; (2)device marking: device type, e.g., 2N5550, date code.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s).
The absolute maximum ratings of the 2N5550RLRA can be summarized as:(1)collector-emitter voltage:140V;(2)operating junction temperature range:-55 to +150;(3)storage temperature:-55 to +150;(4)collector -base voltage:160V;(5)emitter - base voltage:6.0V;(6)collector current - continuous:600mA;(7)total device disspation:625mW.Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages."Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts.
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Technical/Catalog Information | 2N5550RLRA |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 140V |
Current - Collector (Ic) (Max) | 600mA |
Power - Max | 625mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 50mA |
Frequency - Transition | 300MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-92-3, TO-226AA (Formed Leads) |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | 2N5550RLRA 2N5550RLRA |