2N5550RLRP

Transistors Bipolar (BJT) 600mA 160V NPN

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SeekIC No. : 00214416 Detail

2N5550RLRP: Transistors Bipolar (BJT) 600mA 160V NPN

floor Price/Ceiling Price

Part Number:
2N5550RLRP
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 140 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 60 at 1 mA at 5 V Configuration : Single
Maximum Operating Frequency : 300 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Ammo    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Package / Case : TO-92
Maximum Operating Frequency : 300 MHz
Packaging : Ammo
Maximum DC Collector Current : 0.6 A
Collector- Emitter Voltage VCEO Max : 140 V
DC Collector/Base Gain hfe Min : 60 at 1 mA at 5 V


Parameters:

Technical/Catalog Information2N5550RLRP
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)140V
Current - Collector (Ic) (Max)600mA
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 50mA
Frequency - Transition300MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92-3, TO-226AA (Formed Leads)
PackagingTape & Box (TB)
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names 2N5550RLRP
2N5550RLRP



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