Transistor Polarity
: NPN
Configuration
: Single
Maximum Operating Temperature
: + 150 C
Emitter- Base Voltage VEBO
: 6 V
Mounting Style
: Through Hole
Package / Case
: TO-92
Maximum Operating Frequency
: 300 MHz
Packaging
: Box
Collector- Emitter Voltage VCEO Max
: 160 V
Maximum DC Collector Current
: 0.6 A
DC Collector/Base Gain hfe Min
: 80 at 1 mA at 5 V
Pinout
Specifications
|
Symbol |
Parameter |
Value |
Units |
|
VCEO |
Collector-Emitter Voltage |
160 |
V |
|
VCBO |
Collector-Base Voltage |
180 |
V |
|
VEBO |
Emitter-Base Voltage |
6.0 |
V |
|
IC |
Collector Current - Continuous |
600 |
mA |
|
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
°C |
DescriptionThe 2N5551 is a kind of NPN silicon amplifier transistors.
The features of 2N5551 can be summarized as (1)power dissipation verlustleistung: 625 mW; (2)plastic case kunststoffgehause: TO-92(10D3); (3)weight approx. gewicht ca.: 0.18 g; (4)plastic material has UL classification 94V-0 gehausematerial UL94V-0 klassifiziert; (5)standard packaging taped in ammo pack; (6)standard lieferform gegurtet in ammo-pack.
The absolute maximum ratings of 2N5551 are (1)collector-emitter voltag(VCEO):160Vdc; (2)collector-base voltage(VCBO): 180Vdc; (3)emitter-base voltage(VEBO): 6.0 Vdc; (4)collector current -continuous(IC): 600 mAdc; (5)total device dissipation @ TA = 25°C(PD): 625mW; 5.0mW/°C(derate above 25°C); (6)total device dissipation @ TC = 25°C(PD): 1.5Watts; 12mW/°C(derate above 25°C); (7)operating and storage junction temperature range(TJ, Tstg): -55 to +150 °C; (8)thermal resistance, junction to ambient(RJA): 200 °C/W; (9)thermal resistance, junction to case (RJC): 83.3 °C/W.
Parameters: | Technical/Catalog Information | 2N5551 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 160V |
| Current - Collector (Ic) (Max) | 600mA |
| Power - Max | 625mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Frequency - Transition | 300MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-92-3, TO-226AA (Straight Leads) |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | 2N5551
2N5551
2N5551OS ND
2N5551OSND
2N5551OS
|
2N5551 Data Sheet
