2N5551CN

Features: • High collector breakdown voltage : VCBO = 180V, VCEO = 160V• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)Specifications SYMBOLS PARAMETERS UNIT RATINGS VEBO Collector to Base Voltage V 180 VCEO Collector to Emitter Voltage V ...

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SeekIC No. : 004219203 Detail

2N5551CN: Features: • High collector breakdown voltage : VCBO = 180V, VCEO = 160V• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)Specifications SYMBOLS PARAMETERS UNIT RATI...

floor Price/Ceiling Price

Part Number:
2N5551CN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• High collector breakdown voltage : VCBO = 180V, VCEO = 160V
• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)



Specifications

SYMBOLS
PARAMETERS
UNIT
RATINGS
VEBO
Collector to Base Voltage
V
180
VCEO
Collector to Emitter Voltage
V
160
VEBO
Emitter to Base Voltage
V
6
IC
Collector Current
mA
600
PC
Collector power dissipation
mW
400
TJ
Junction Temperature
150
TSTG
Storage Temperature
-65 to +150



Description

• General purpose amplifier
• High voltage application 2N5551CN


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