2N5551N

Features: • High collector breakdown voltage : VCBO = 180V, VCEO = 160V• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)• Complementary pair with 2N5401NSpecificationsCollector-base voltage VCBO ......................180 VCollector-emitter voltage VCEO ...................1...

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SeekIC No. : 004219205 Detail

2N5551N: Features: • High collector breakdown voltage : VCBO = 180V, VCEO = 160V• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)• Complementary pair with 2N5401NSpecificationsCollec...

floor Price/Ceiling Price

Part Number:
2N5551N
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• High collector breakdown voltage : VCBO = 180V, VCEO = 160V
• Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
• Complementary pair with 2N5401N



Specifications

Collector-base voltage VCBO ......................180 V
Collector-emitter voltage VCEO ...................160 V
Emitter-base voltage VEBO .............................6 V
Collector current IC ..................................600 mA
Collector power dissipation PC............... 400 mW
Junction temperature TJ .............................150
Storage temperature range Tstg........ -55~150



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