2N5551RL1G, US $ .06-.22 , ON Semiconductor, 2N5551RL1G DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00204303 Detail

2N5551RL1G: Transistors Bipolar (BJT) 600mA 180V NPN

2N5551RL1G Data Sheet

US $ .06~.22 / Piece | Get Latest Price

Part Number:: 2N5551RL1G
Mfg:: ON Semiconductor
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	160 V
Emitter- Base Voltage VEBO :	6 V	Maximum DC Collector Current :	0.6 A
DC Collector/Base Gain hfe Min :	80 at 1 mA at 5 V	Configuration :	Single
Maximum Operating Frequency :	300 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Reel

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Package / Case : TO-92
Maximum Operating Frequency : 300 MHz
Collector- Emitter Voltage VCEO Max : 160 V
Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 80 at 1 mA at 5 V

Parameters:

Technical/Catalog Information	2N5551RL1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	160V
Current - Collector (Ic) (Max)	600mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Frequency - Transition	300MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Formed Leads)
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N5551RL1G 2N5551RL1G

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2N5551RL1G

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