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2N5631

Transistors Bipolar (BJT) 16A 140V 200W NPN

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SeekIC No. : 00214507 Detail

2N5631: Transistors Bipolar (BJT) 16A 140V 200W NPN

2N5631 Data Sheet

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Part Number:
2N5631
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 140 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 16 A
DC Collector/Base Gain hfe Min : 15 Configuration : Single
Maximum Operating Frequency : 1 MHz (Min) Maximum Operating Temperature : + 200 C
Mounting Style : Through Hole Package / Case : TO-204AA
Packaging : Tray    

Description

Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Temperature : + 200 C
Packaging : Tray
DC Collector/Base Gain hfe Min : 15
Maximum DC Collector Current : 16 A
Collector- Emitter Voltage VCEO Max : 140 V
Package / Case : TO-204AA
Maximum Operating Frequency : 1 MHz (Min)


Application

·For high power audio amplifier and high voltage switching regulator circuits applications






Specifications

SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
140
V
VCEO
Collector-emitter voltage
Open base
140
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
16
A
ICM
 Collector current-peak
20
A
IB
 Base current
5.0
A
PD
Total power dissipation
TC=25
200
W
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200





Description

With TO-3 package
·Complement to type 2N6031
·High collector-emitter sustaining voltage
·High DC current gain@IC=8A
·Low collector saturation voltage
2N5631



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