2N5657

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Emitter- Base Voltage VEBO : 6 V
Packaging : Tube
Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 30
Collector- Emitter Voltage VCEO Max : 350 V
Maximum Operating Frequency : 10 MHz
Package / Case : SOT-32


Features:

· SGS-THOMSON PREFERRED SALESTYPE
· NPN TRANSISTOR




Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage (IE = 0)	376	V
VCEO	Collector-Emitter Voltage (IB = 0)	350	V
VEBO	Emitter-Base Voltage (IC = 0)	6	V
IC	Collector Current	0.5	A
ICM	Collector Peak Current	1	A
IB	Base Current	0.25	A
Ptot	Total Dissipation at Tc 25	20	W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays.

Parameters:

Technical/Catalog Information	2N5657
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	350V
Current - Collector (Ic) (Max)	500mA
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 25mA, 250mA
Frequency - Transition	10MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	SOT-32-3, TO-126-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N5657 2N5657 497 2623 5 ND 49726235ND 497-2623-5