2N5884

Configuration :
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 25 A
Maximum Operating Frequency : 4 MHz
DC Collector/Base Gain hfe Min : 35
Package / Case : TO-3
Packaging : Sleeve


Features:

· SGS-THOMSON PREFERRED SALESTYPES
· COMPLEMENTARY PNP - NPN DEVICES
· HIGH CURRENT CAPABILITY




Application

·GENERAL PURPOSE SWITCHING AND AMPLIFIER
·LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT




Specifications

Symbol	Parameter		Value	Unit
		PNP	2N5884
		NPN	2N5886
VCBO	Collector-Base Voltage (IE = 0)		80	V
VCEO	Collector-Emitter Voltage (IB = 0)		80	V
VEBO	Emitter-Base Voltage (IC = 0)		5	V
IC	Collector Current		25	A
ICM	Collector Peak Current		50	A
IB	Base Current		7.5	A
Ptot	Total Dissipation atTcase 25		200	W
Tstg	Storage Temperature		-65 to 200
Tj	Max. Operating Junction Temperature		200

For PNP types voltage and current values are negative.




Description

The 2N5884 and 2N5886 are complementary silicon power transistor in Jedec TO-3 metal case inteded for use in power linear amplifiers and switching applications.

Parameters:

Technical/Catalog Information	2N5884
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	25A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 10A, 4V
Vce Saturation (Max) @ Ib, Ic	1V @ 1.5A, 15A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	2mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N5884 2N5884 2N5884OS ND 2N5884OSND 2N5884OS